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Author Gol’tsman, G.; Korneev, A.; Tarkhov, M.; Seleznev, V.; Divochiy, A.; Minaeva, O.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.
Title Middle-infrared ultrafast superconducting single photon detector Type (up) Conference Article
Year 2007 Publication 32nd IRMW / 15th ICTE Abbreviated Journal 32nd IRMW / 15th ICTE
Volume Issue Pages 115-116
Keywords SSPD, SNSPD
Abstract We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%.
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Notes Approved no
Call Number Serial 1246
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Author Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G.
Title New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving Type (up) Conference Article
Year 2008 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 97 Issue Pages 012307 (1 to 6)
Keywords PNR SSPD; SNSPD
Abstract We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6596 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1245
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Author Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G.
Title Superconducting photon number resolving counter for near infrared applications Type (up) Conference Article
Year 2008 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 7138 Issue Pages 713828 (1 to 5)
Keywords PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared
Abstract We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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Publisher Spie Place of Publication Editor Tománek, P.; Senderáková, D.; Hrabovský, M.
Language Summary Language Original Title
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Notes Approved no
Call Number 10.1117/12.818079 Serial 1241
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Author Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol’tsman, G.
Title Superconducting NbN-nanowire single-photon detectors capable of photon number resolving Type (up) Conference Article
Year 2008 Publication Supercond. News Forum Abbreviated Journal Supercond. News Forum
Volume Issue Pages
Keywords PNR SSPD, SNSPD
Abstract We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Reference No. ST34, paper # 012307, eventually not pulished (skipped) at https://iopscience.iop.org/issue/0953-2048/21/1 Approved no
Call Number RPLAB @ sasha @ korneevsuperconducting Serial 1046
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type (up) Conference Article
Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 6
Keywords Multi-pixel, HEB, silicon-on-insulator, horn array
Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1111
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