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Author Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
Title Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform Type (up) Conference Article
Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 220 Issue Pages 03012
Keywords e-beam lithography, Si3N4
Abstract In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1189
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Author Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Gap frequency and photon absorption in a hot electron bolometer Type (up) Conference Article
Year 2016 Publication Proc. 27th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 27th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 121
Keywords NbN HEB; Si membrane
Abstract The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1204
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Author Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
Title Counting photons using a nanonetwork of superconducting wires Type (up) Conference Article
Year 2009 Publication Nano-Net Abbreviated Journal
Volume Issue Pages 120-122
Keywords SSPD, SNSPD
Abstract We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
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Corporate Author Thesis
Publisher Springer Berlin Heidelberg Place of Publication Berlin, Heidelberg Editor Cheng, M.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-3-642-02427-6 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 10.1007/978-3-642-02427-6_20 Serial 1242
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Author Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R.
Title Ultrafast and high quantum efficiency large-area superconducting single-photon detectors Type (up) Conference Article
Year 2007 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6583 Issue Pages 65830I (1 to 9)
Keywords SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors
Abstract We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped  0.5-mm-long and  100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of  30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
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Corporate Author Thesis
Publisher Spie Place of Publication Editor Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1249
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Author Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N.
Title Bandwidth performance of a THz normal metal TiN bolometer-mixer Type (up) Conference Article
Year 2019 Publication Proc. 30th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 30th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 102-103
Keywords TiN normal metal bolometer, NMB
Abstract We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1279
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