| Records |
| Author |
Khosropanah, P.; Merkel, H.; Yngvesson, S.; Adam, A.; Cherednichenko, S.; Kollberg, E. |
| Title |
A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth |
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Conference Article |
| Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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474-488 |
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HEB mixer numerical model, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model |
| Abstract |
A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted. |
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University of Michigan, Ann Arbor, MI USA |
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893 |
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Cherednichenko, S.; Khosropanah, P.; Berg, T.; Merkel, H.; Kollberg, E.; Drakinskiy, V.; Voronov, B.; Gol’tsman, G. |
| Title |
Optimization of HEB mixer for the Herschel Space Observatory |
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Abstract |
| Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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16 |
| Keywords |
NbN HEB mixers, applications |
| Abstract |
A mixer development for the HIFI instrument of the Herschel Space Observatory has come to the final stage. In our paper and conference presentation we will describe the most important details of the Band 6 Low and High Mixer Unit design. Special attention will be given to the optimization of the hot- electron bolometer mixer chip, which is based on 3.5nm NbN superconducting film on silicon. As the HEB’s local oscillator power requirements depend on the bolometer size, we have compared mixer noise temperature for different bolometer width- to- length ratio. A trade- off between mixer performance and local oscillator power requirements results in the mixer units equipped with optimized mixer chips, providing the largest coverage of the Band6 RF band with the lowest possible receiver noise. A short account of the beam pattern measurements of Band6 mixers will be given as well. |
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1490 |
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Loudkov, D.; Khosropanah, P.; Cherednichenko, S.; Adam, A.; MerkeI, H.; Kollberg, E.; Gol'tsman, G. |
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Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies |
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Conference Article |
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2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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373-369 |
| Keywords |
NbN HEB mixers |
| Abstract |
The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state. |
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1530 |
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