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Baselmans, J. J. A.; de Visser, P. J.; Yates, S. J. C.; Bueno, J.; Jansen, R. M. J.; Endo, A.; Thoen, D. J.; Baryshev, A. M.; Ferrari, L.; Klapwijk, T. M. |
| Title |
Large format, background limited arrays of kinetic inductance detectors for sub-mm astronomy |
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Abstract |
| Year |
2014 |
Publication |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
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64 |
| Keywords |
KID |
| Abstract |
Kinetic Inductance detectors have held a promise for the last decade to enable very large arrays, in excess of 10.000 pixels, with background limited sensitivity for ground- and Space Based sub-mm observatories. First we present the development of the detector chips of the A-MKID instrument: These chips contain up to 5400 detector pixel divided over up to 5 readout lines for the 350 GHz and 850 GHz atmospheric windows. The individual detectors are lens antenna coupled KIDs made of NbTiN and Aluminium that reach photon noise limited sensitivity at sky loading levels in excess of a few fW per pixel using either phase readout or amplitude readout. The ability to use phase readout is crucial as it reduces the requirements on the readout electronics of the instrument. Cross coupling between the KID resonators was mitigated by a combination of numerical simulations and a suitable position encoding of the readout resonance frequencies of the individual pixels. Beam pattern measurements are performed to demonstrate the absence of any cross talk due to resonator- resonator cross coupling. Second we present experiments on individual lens-antenna coupled detectors at 1.5 THz that are made out of aluminium. With these devices we have observed, as a function of the irradiated power at 1.5 THz, the crossover from photon noise limited performance to detector-limited performance at loading powers less than 0.1 fW. In the latter limit the device is limited by intrinsic fluctuations in the Cooper pair and quasiparticle number, i.e. Generation-Recombination noise. This results in a sensitivity corresponding to a NEP = 3.8·10 -19 W/√(Hz). |
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1360 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
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Abstract |
| Year |
2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
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71 |
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carbon nanotubes, CNT |
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This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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Peltonen, J. T.; Astafiev, O. V.; Korneeva, Y. P.; Voronov, B. M.; Korneev, A. A.; Charaev, I. M.; Semenov, A. V.; Golt'sman, G. N.; Ioffe, L. B.; Klapwijk, T. M.; Tsai, J. S. |
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Coherent flux tunneling through NbN nanowires |
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Journal Article |
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2013 |
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Phys. Rev. B |
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Phys. Rev. B |
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88 |
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22 |
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220506 (1 to 5) |
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NbN nanowires |
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We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models. |
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1098-0121 |
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1369 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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6 |
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062504 (1 to 3) |
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NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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1425 |
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Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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Abstract |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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81 |
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NbN HEB mixers |
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We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999). |
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