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Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. |
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Critical pair-breaking current in superconducting aluminum strips far below Tc |
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1982 |
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Phys. Rev. B |
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Phys. Rev. B |
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26 |
Issue |
7 |
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3648-3655 |
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superconducting nanowire |
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Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity. |
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Recommended by Klapwijk |
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925 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Title |
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
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Journal Article |
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1994 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
49 |
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15 |
Pages |
10484-10494 |
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Keywords |
Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
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Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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de Lange, G.; Kuipers, J. J.; Klapwijk, T. M.; Panhuyzen, R. A.; van de Stadt, H.; de Graauw, M. W. M. |
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Title |
Superconducting resonator circuits at frequencies above the gap frequency |
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1995 |
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J. Appl. Phys. |
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77 |
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4 |
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1795-1804 |
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257 |
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Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
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Resistive transition of niobium superconducting hot-electron bolometer mixers |
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1998 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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73 |
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19 |
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2826 |
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HEB |
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0003-6951 |
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543 |
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Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
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Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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2001 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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79 |
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15 |
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2483-2485 |
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0003-6951 |
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311 |
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