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Author Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. doi  openurl
  Title Critical pair-breaking current in superconducting aluminum strips far below Tc Type Journal Article
  Year (up) 1982 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 26 Issue 7 Pages 3648-3655  
  Keywords superconducting nanowire  
  Abstract Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a ρl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for ρl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 925  
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year (up) 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
  Address  
  Corporate Author Thesis  
  Publisher American Physical Society Place of Publication Editor  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1005  
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Author de Lange, G.; Kuipers, J. J.; Klapwijk, T. M.; Panhuyzen, R. A.; van de Stadt, H.; de Graauw, M. W. M. openurl 
  Title Superconducting resonator circuits at frequencies above the gap frequency Type Journal Article
  Year (up) 1995 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 77 Issue 4 Pages 1795-1804  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 257  
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Author Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. url  doi
openurl 
  Title Resistive transition of niobium superconducting hot-electron bolometer mixers Type Journal Article
  Year (up) 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2826  
  Keywords HEB  
  Abstract  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 543  
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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. url  doi
openurl 
  Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
  Year (up) 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 79 Issue 15 Pages 2483-2485  
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  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 311  
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Author Jackson, B. D.; Baryshev, A. M.; de Lange, G.; Gao, J. R.; Shitov, S. V.; Iosad, N. N.; Klapwijk, T. M. openurl 
  Title Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit Type Journal Article
  Year (up) 2001 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 79 Issue 3 Pages 436  
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  Notes Approved no  
  Call Number RPLAB @ s @ sis_Jackson_2001 Serial 314  
Permanent link to this record
 
 
Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. url  openurl
  Title Improved NbN phonon cooled hot electron bolometer mixers Type Conference Article
  Year (up) 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 413-423  
  Keywords NbN HEB mixers  
  Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Tucson, USA Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 337  
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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. url  openurl
  Title Noise performance of NbN hot electron bolometer mixers at 2.5 THz and its dependence on the contact resistance Type Conference Article
  Year (up) 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 11-19  
  Keywords NbN HEB mixers  
  Abstract NbN hot electron bolometer mixers (HEBM) are at this moment the best heterodyne receivers for frequencies above 1 Thz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. The result is a low transparency interface between the bolometer itself and the contact/antenna structure. In this paper we report a detailed experimental study on a novel idea to increase the transparency of this interface. This leads to a record sensitivity and more reproducible performance. We compare identical bolometers, coupled with a spiral antenna, with different NbN bolometer-contact pad interfaces. We find that cleaning the NbN interface alone results in an increase in the noise temperature. However, cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature of the HEBm with more than a factor of 2. A device with a contact pad on top of an in-situ cleaned NbN film consisting of 10 nm of NbTiN and 40 nm of gold has a DSB noise temperature of 1050 K at 2.5 THz.  
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  Notes Approved no  
  Call Number Serial 1497  
Permanent link to this record
 
 
Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz Type Journal Article
  Year (up) 2004 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 17 Issue 5 Pages S224-S228  
  Keywords NbN HEB mixers  
  Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 558  
Permanent link to this record
 
 
Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers Type Journal Article
  Year (up) 2004 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 84 Issue 11 Pages 1958-1960  
  Keywords NbN HEB mixers  
  Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K

at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.		  
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  Notes Approved no  
  Call Number Serial 352  
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