| Records |
| Author |
Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G. |
| Title |
Three-dimensional polymer wire bonds on a chip: morphology and functionality |
Type |
Journal Article |
| Year |
2020 |
Publication |
J. Phys. D: Appl. Phys. |
Abbreviated Journal |
J. Phys. D: Appl. Phys. |
| Volume |
53 |
Issue |
35 |
Pages |
355102 |
Keywords  |
photonic wire bonds, PWB |
| Abstract |
Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip. |
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0022-3727 |
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1181 |
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| Author |
Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
| Title |
Study of microheater’s phase modulation for on-chip Kennedy receiver |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012117 |
| Keywords |
Mach-Zehnder interferometers, MZI |
| Abstract |
In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters. |
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1742-6588 |
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no |
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1179 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. |
| Title |
Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices |
Type |
Journal Article |
| Year |
2011 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
| Volume |
56 |
Issue |
6 |
Pages |
826-830 |
| Keywords |
GaAs/AlGaAs superlattices |
| Abstract |
The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. |
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| ISSN |
1063-7842 |
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no |
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1214 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
| Title |
Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
Type |
Journal Article |
| Year |
2011 |
Publication |
Semicond. Sci. Technol. |
Abbreviated Journal |
Semicond. Sci. Technol. |
| Volume |
26 |
Issue |
2 |
Pages |
025013 |
| Keywords |
AlGaAs/GaAs heterojunctions |
| Abstract |
We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. |
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0268-1242 |
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no |
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1215 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
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Journal Article |
| Year |
2010 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
44 |
Issue |
11 |
Pages |
1427-1429 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
| Abstract |
The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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| Notes |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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1216 |
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