| Records |
| Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z. |
| Title |
Hot electron bolometric mixers based on NbN films deposited on MgO substrates |
Type |
Conference Article |
| Year |
1999 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
| Volume |
167 |
Issue |
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Pages |
687-690 |
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Place of Publication |
Barcelona, Spain |
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Conference |
4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser. |
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no |
| Call Number |
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Serial |
297 |
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| Author |
Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
| Title |
NbN hot electron bolometric mixers for terahertz receivers |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
11 |
Issue |
1 |
Pages |
962-965 |
| Keywords |
NbN HEB mixers |
| Abstract |
Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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no |
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Serial |
312 |
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| Author |
Kroug, M. |
| Title |
Hot electron bolometric mixers for a quasi-optical terahertz receiver |
Type |
Book Whole |
| Year |
2001 |
Publication |
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Abbreviated Journal |
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Issue |
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Pages |
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Thesis |
Ph.D. thesis |
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Place of Publication |
Chalmers University of Technology, Gothenburg, Sweden |
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no |
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Serial |
310 |
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| Author |
Merkel, H. F.; Khosropanah, P.; Sigfrid Yngvesson, K.; Cherednichenko, S.; Kroug, M.; Adam, A.; Kollberg, E. |
| Title |
An active zone small signal model for hot-electron bolometric mixers |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
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Issue |
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Pages |
55 |
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Place of Publication |
San Diego, CA, USA |
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RPLAB @ s @ losses_in_contacts_merkel |
Serial |
320 |
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| Author |
Uzawa, Y.; Kojima, T.; Kroug, M.; Takeda, M.; Candotti, M.; Fujii, Y.; Shan, W.-L.; Kaneko, K.; Shitov, S.; Wang, M.-J. |
| Title |
Development of the 787-950 GHz ALMA band 10 cartridge |
Type |
Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
12-12 |
| Keywords |
SIS mixer, noise temperature, ALMA, band 10 |
| Abstract |
We are developing the Atacama Large Millimeter/Submillimeter Array (ALMA) Band 10 (787-950 GHz) receiver cartridge. The incoming beam from the 12-m antenna is reflected by a pair of two ellipsoidal mirrors placed in the cartridge, and then split into two orthogonal polarizations by a free-standing wire-grid. Each beam enters a corrugated feed horn attached to a double-side-band (DSB) mixer block. The mixer uses a full-height waveguide and an NbTiN- or NbN-based superconductor-insulator-superconductor (SIS) mixer chip. We are testing the following three types of mixer chips: 1) Nb SIS junctions + NbTiN/SiO2/Al tuning circuits on a quartz substrate, 2) Nb SIS junctions + NbN/SiO2/Al tuning circuits on an MgO substrate, and 3) NbN SIS junctions + NbN or NbTiN tuning circuits on an MgO substrate. The IF system uses a 4-12-GHz cooled low-noise InP-based MMIC amplifier developed by Caltech. So far, the type 1) has shown the best performance. At LO frequencies from 800 to 940 GHz, the mixer noise temperatures measured by using the standard Y-factor method were below 240 K at an operating physical temperature of 4 K. The lowest noise temperature, 169 K, was obtained at the center frequency of the band 10, as designed. These well-developed technologies will be implemented in the band 10 cartridge to achieve the ALMA specifications. |
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no |
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Serial |
615 |
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