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Author  |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
| Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 5 | Pages | 185-186 |
| Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1739 | |||
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