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Author (up) Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. openurl 
  Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 147-148  
  Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth  
  Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.  
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  Call Number Serial 1175  
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Author (up) Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. url  doi
openurl 
  Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
  Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 32 Issue 7 Pages 075003  
  Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate  
  Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.  
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  Publisher IOP Publishing Place of Publication Editor  
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  Notes Approved no  
  Call Number Antipov_2019 Serial 1277  
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Author (up) Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. openurl 
  Title Towards Multi-Pixel Heterodyne Terahertz Receivers Type Conference Article
  Year 2011 Publication Proc. 22th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages  
  Keywords  
  Abstract Terahertz multi-pixel heterodyne receivers introduce multiple challenges for their implementation, mostly due to the extremely small dimensions of all components and even smaller tolerances in terms of alignment, linear dimensions and waveguide component surface quality. In this manuscript, we present a concept of terahertz multi-pixel heterodyne receiver employing optical layout using polarization split between the LO and RF. The frontend isbased on a waveguide balanced HEB mixer for the frequency band 1.6 – 2.0 THz. The balanced HEB mixer followsthe layout of earlier demonstrated APEX T2 mixer. However for the mixer presented here, we implemented split-block layout offering inimized lengths of all waveguides and thus reducing the associated RF loss. The micromachining methods employed for producing the mixer housing and the HEB mixer chip are very suitable for producing multiple structures and hence are in-line with requirements of multi-pixel receiver technology. The demonstrated relatively simple mounting of the mixer chip with self-aligning should greatly facilitate the integration of such multi-channel receiver. Index Terms—Instrumentation, Multi-pixel, Terahertz, Waveguide Balanced Mixer.  
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 975  
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Author (up) Blundell, R.; Barrett, J.; H. Gibson, C. Gotteib; Hunter, T.; Kimberk, R.; Leiker, S.; Marrone, D.; Meledin, D.; Paine, S.; Papa, D. C.; Plante, R.; Riddle, P.; Smith, M.; Sridharan, T.; Tong, C. E.; Wilson, R.; Diaz, M.; Bronfman, L.; May, J.; Otarola, A.; Radford, S. J. openurl 
  Title Prospects for terahertz radio astronomy from Northean Chile Type Conference Article
  Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 159-166  
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  Publisher Place of Publication Cambridge, MA, USA Editor Harvard university  
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  Notes Approved no  
  Call Number RPLAB @ s @ meledin_2p5_stability Serial 327  
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Author (up) Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. url  openurl
  Title Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method Type Conference Article
  Year 2016 Publication Proc. 27th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 30-32  
  Keywords NbN HEB, GaN buffer layer  
  Abstract In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.  
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  Notes Approved no  
  Call Number Serial 1202  
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Author (up) Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. url  doi
openurl 
  Title Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers Type Journal Article
  Year 2017 Publication IEEE Trans. Terahertz Sci. Technol. Abbreviated Journal IEEE Trans. Terahertz Sci. Technol.  
  Volume 7 Issue 1 Pages 53-59  
  Keywords NbN HEB mixer  
  Abstract In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.  
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  ISSN 2156-3446 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1330  
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Author (up) Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations Type Journal Article
  Year 2004 Publication IEEE Trans. Microwave Theory Techn. Abbreviated Journal IEEE Trans. Microwave Theory Techn.  
  Volume 52 Issue 10 Pages 2338-2343  
  Keywords NbN HEB mixer, applications  
  Abstract In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile.  
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  ISSN 0018-9480 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1484  
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Author (up) Meledin, D.; Pantaleev, M.; Pavolotsky, A.; Risacher, C.; Belitsky, V.; Drakinskiy, V.; Cherednichenko, S. openurl 
  Title Balanced waveguide HEB mixer for APEX 1.3 THz receiver Type Conference Article
  Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
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  Address  
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  Publisher Place of Publication Göteborg, Sweden Editor  
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  Notes Approved no  
  Call Number RPLAB @ s @ wg_balanced Serial 362  
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Author (up) Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 13 Issue 2 Pages 164-167  
  Keywords NbN HEB mixer  
  Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.  
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  Notes Approved no  
  Call Number Serial 341  
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Author (up) Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. url  openurl
  Title The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz Type Conference Article
  Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 65-72  
  Keywords waveguide NbN HEB mixers  
  Abstract We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.  
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  Publisher Place of Publication Cambridge, MA, USA Editor Harvard university  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 326  
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