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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz Type Conference Article
Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 65-72
Keywords waveguide NbN HEB mixers
Abstract We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
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Publisher Place of Publication Cambridge, MA, USA Editor Harvard university
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Notes Approved no
Call Number (up) Serial 326
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Author Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G.
Title A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator Type Conference Article
Year 2003 Publication IEEE MTT-S Int. Microwave Symp. Digest Abbreviated Journal IEEE MTT-S Int. Microwave Symp. Digest
Volume 2 Issue Pages 751-754
Keywords waveguide NbN HEB mixers
Abstract We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W.
Address Philadelphia, PA, USA
Corporate Author Thesis
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Notes Approved no
Call Number (up) Serial 1516
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 13 Issue 2 Pages 164-167
Keywords NbN HEB mixer
Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Notes Approved no
Call Number (up) Serial 341
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Author Risacher, C.; Meledin, D.; Belitsky, V.; Bergman, P.
Title First 1.3 THz observations at the APEX telescope Type Conference Article
Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 54-61
Keywords balanced HEB mixer noise temperature APEX telescope stability Allan variance aperture efficiency
Abstract The Atacama Pathfinder EXperiment (APEX) 12m telescope is operating on the Llano Chajnantor, Chile, since 2003 and a set of state of the art sub-millimeter receivers have been installed for frequencies spanning from 150 GHz to 1500 GHz. In 2008, a balanced 1.3 THz Hot Electron Bolometer (HEB) receiver was installed for the atmospheric window 1250-1380 GHz. This instrument is part of a 4-channel receiver cryostat with the other channels being 211-275 GHz, 275-370 GHz and 380-500 GHz Sideband Separating (SSB) SIS receivers. This paper presents the first observations obtained so far with the 1.3 THz band during its first months of operation. The sky measurements were taken during opportunistic commissioning and science verification phases, when the weather conditions were sufficiently good with a Precipitable Water Vapor (PWV) below 0.25 mm, which was the case only a few nights during these months. We present the first observations of the molecular transition CO J=(11-10) line on different sources such as Orion-FIR4, CW-Leo and SgrB2(M). We describe the many challenges and difficulties encountered for achieving successful THz observations from a large sub-millimeter ground-based telescope.
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Notes Approved no
Call Number (up) Serial 619
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 147-148
Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth
Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Notes Approved no
Call Number (up) Serial 1175
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