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Author Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Slepneva, S.; Seleznev, V.; Chulkova, G.; Okunev, O.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.
Title Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 5957 Issue Pages 59570A (1 to 9)
Keywords SSPD, SNSPD, single-photon detectors, superconductors, superconducting
Abstract We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.
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Corporate Author Thesis
Publisher SPIE Place of Publication Editor Rogalski, A.; Dereniak, E.L.; Sizov, F.F.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Infrared Photoelectronics
Notes Approved no
Call Number Serial 1458
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Author Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R.
Title Advanced nanostructured optical NbN single-photon detector operated at 2.0 K Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 5732 Issue Pages 520-529
Keywords NbN SSPD, SNSPD
Abstract We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as  30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was  20% and decreased exponentially with the wavelength reaching  0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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Corporate Author Thesis
Publisher Spie Place of Publication Editor Razeghi, M.; Brown, G.J.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Quantum Sensing and Nanophotonic Devices II
Notes Approved no
Call Number Serial 1478
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Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films Type Conference Article
Year 1994 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 2160 Issue Pages 74-82
Keywords YBCO HTS switches
Abstract We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Publisher SPIE Place of Publication Editor Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Superconductive Devices and Circuits
Notes Approved no
Call Number Serial 1638
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Author Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol’tsman, G.
Title Superconducting NbN-nanowire single-photon detectors capable of photon number resolving Type Conference Article
Year 2008 Publication Supercond. News Forum Abbreviated Journal (up) Supercond. News Forum
Volume Issue Pages
Keywords PNR SSPD, SNSPD
Abstract We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
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Notes Reference No. ST34, paper # 012307, eventually not pulished (skipped) at https://iopscience.iop.org/issue/0953-2048/21/1 Approved no
Call Number RPLAB @ sasha @ korneevsuperconducting Serial 1046
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Author Seleznev, V. A.; Tarkhov, M. A.; Voronov, B. M.; Milostnaya, I. I.; Lyakhno, V. Yu; Garbuz, A. S.; Mikhailov, M. Yu; Zhigalina, O. M.; Gol'tsman, G. N.
Title Deposition and characterization of few-nanometers-thick superconducting Mo-Re films Type Journal Article
Year 2008 Publication Supercond. Sci. Technol. Abbreviated Journal (up) Supercond. Sci. Technol.
Volume 21 Issue 11 Pages 115006 (1 to 6)
Keywords
Abstract We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 723
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