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Gol'tsman, G.; Minaeva, O.; Korneev, A.; Tarkhov, M.; Rubtsova, I.; Divochiy, A.; Milostnaya, I.; Chulkova, G.; Kaurova, N.; Voronov, B.; Pan, D.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Komissarov, I.; Slysz, W.; Wegrzecki, M.; Grabiec, P.; Sobolewski, R. |
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Title |
Middle-infrared to visible-light ultrafast superconducting single-photon detectors |
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2007 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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246-251 |
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SSPD, SNSPD |
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We present an overview of the state-of-the-art of NbN superconducting single-photon detectors (SSPDs). Our devices exhibit quantum efficiency (QE) of up to 30% in near-infrared wavelength and 0.4% at 5 mum, with a dark-count rate that can be as low as 10 -4 s -1 . The SSPD structures integrated with lambda/4 microcavities achieve a QE of 60% at telecommunication, 1550-nm wavelength. We have also developed a new generation of SSPDs that possess the QE of large-active-area devices, but, simultaneously, are characterized by low kinetic inductance that allows achieving short response times and the GHz-counting rate with picosecond timing jitter. The improvements presented in the SSPD development, such as fiber-coupled SSPDs, make our detectors most attractive for high-speed quantum communications and quantum computing. |
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Kitaygorsky, J.; Komissarov, I.; Jukna, A.; Pan, D.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R.R. |
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Dark counts in nanostructured nbn superconducting single-photon detectors and bridges |
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2007 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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275-278 |
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SSPD; SNSPD |
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We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs. |
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1248 |
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Korneev, A.; Matvienko, V.; Minaeva, O.; Milostnaya, I.; Rubtsova, I.; Chulkova, G.; Smirnov, K.; Voronov, V.; Gol’tsman, G.; Slysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
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Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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571-574 |
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NbN SSPD, SNSPD, QE, NEP |
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We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications. |
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1558-2515 |
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1467 |
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Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3338-3341 |
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NbN SSPD, SNSPD |
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We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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1051-8223 |
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1566 |
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Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Title |
Fast NbN superconducting switch controlled by optical radiation |
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Journal Article |
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1997 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3734-3737 |
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NbN superconducting switch |
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The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1596 |
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