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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area (up) Expedition Conference
Notes Approved no
Call Number Serial 307
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Author Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol'tsman, G.
Title One-dimensional resistive states in quasi-two-dimensional superconductors Type Journal Article
Year 2007 Publication arXiv:0709.0709v1 [cond-mat.supr-con] Abbreviated Journal
Volume Issue Pages 1-11
Keywords
Abstract We investigate competition between one- and two-dimensional topological excitations – phase slips and vortices – in formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature T(C0). The widths w = 100 nm of our ultrathin NbN samples is substantially larger than the Ginzburg-Landau coherence length ξ = 4nm and the fluctuation resistivity above T(C0) has a two-dimensional character. However, our data shows that the resistivity below T(C0) is produced by one-dimensional excitations, – thermally activated phase slip strips (PSSs) overlapping the sample cross-section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current/temperature variations. Measuring the resistivity within seven orders of magnitude, we find that the quantum phase slips can only be essential below this level.
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Notes Approved no
Call Number RPLAB @ atomics90 @ Serial 948
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Author Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol’tsman, G.
Title One-dimensional resistive states in quasi-two-dimensional superconductors: Experiment and theory Type Journal Article
Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 76 Issue 9 Pages 094521 (1 to 5)
Keywords uasi-two-dimensional superconductors, NbN
Abstract We investigate competition between one- and two-dimensional topological excitations—phase slips and vortices—in the formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature TC0. The widths w=100nm of our ultrathin NbN samples are substantially larger than the Ginzburg-Landau coherence length ξ=4nm, and the fluctuation resistivity above TC0 has a two-dimensional character. However, our data show that the resistivity below TC0 is produced by one-dimensional excitations—thermally activated phase slip strips (PSSs) overlapping the sample cross section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current and/or temperature variations. Measuring the resistivity within 7 orders of magnitude, we find that the quantum phase slips can only be essential below this level.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area (up) Expedition Conference
Notes Approved no
Call Number Serial 1423
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Author Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S.
Title Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection Type Journal Article
Year 2016 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 120 Issue 4 Pages 044501 (1 to 13)
Keywords carbon nanotubes, CNT detectors, plasmons
Abstract We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.
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ISSN 0021-8979 ISBN Medium
Area (up) Expedition Conference
Notes Approved no
Call Number Serial 1777
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