| Records |
| Author |
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051050 (1 to 5) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
Abstract  |
In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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| ISSN |
1742-6588 |
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1301 |
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| Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
| Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
| Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
| Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
| Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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| ISSN |
1530-6984 |
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PMID:32903004 |
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no |
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Serial |
1781 |
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| Author |
Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
| Title |
Resonant terahertz detection using graphene plasmons |
Type |
Journal Article |
| Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
9 |
Issue |
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Pages |
5392 (1 to 8) |
| Keywords |
THz, graphene plasmons |
| Abstract |
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
| Address |
Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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| ISSN |
2041-1723 |
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no |
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Serial |
1148 |
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| Author |
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
| Title |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
Type |
Journal Article |
| Year |
2021 |
Publication |
Adv. Electron. Mater. |
Abbreviated Journal |
Adv. Electron. Mater. |
| Volume |
7 |
Issue |
3 |
Pages |
2000872 |
| Keywords |
SWCNT transistors |
| Abstract |
The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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no |
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1843 |
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| Author |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
| Title |
Tunnel field-effect transistors for sensitive terahertz detection |
Type |
Journal Article |
| Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
12 |
Issue |
1 |
Pages |
543 |
| Keywords |
field-effect transistors, bilayer graphene, BLG |
| Abstract |
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
| Address |
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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| Notes |
PMID:33483488; PMCID:PMC7822863 |
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1261 |
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