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Author  |
Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. | ||||
| Title | Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers | Type | Journal Article | ||
| Year | 2009 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 95 | Issue | 19 | Pages | 3 |
| Keywords | 2DEG | ||||
| Abstract | The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 673 | ||
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