| Records |
| Author |
Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
| Title |
Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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11 |
Issue |
1 |
Pages |
641-644 |
| Keywords |
Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
| Abstract |
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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1051-8223 |
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no |
| Call Number |
ref919426b |
Serial |
1061 |
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| Author |
Prober, D. E. |
| Title |
Superconducting terahertz mixer using a transition-edge microbolometer |
Type |
Journal Article |
| Year |
1993 |
Publication |
Department of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520-2157 |
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Issue |
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Pages |
2119-2121 |
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| Abstract |
We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and a rf signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid ( < 0.1 ns) outdiffision of hot electrons occurs. This gives large intermediate frequency (if) response. The mixer offers ~4 GHz if bandwidth, z 80 Cl rf resistive impedance, good match to the if amplifier, and requires only l-20 nW of local oscillator power. The upper rf frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is l/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 T, respectively. |
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RPLAB @ atomics90 @ |
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955 |
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