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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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Year |
1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
49 |
Issue  |
2 |
Pages |
355-362 |
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Keywords |
Ge, photothermal ionization, shallow impurities |
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Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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Journal Article |
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Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
37 |
Issue |
2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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1975 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
40 |
Issue |
2 |
Pages |
311-315 |
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Keywords |
Ge, cyclotron resonance |
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Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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1988 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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Volume |
22 |
Issue |
3 |
Pages |
540-543 |
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Keywords |
Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Russian |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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