| Records |
| Author |
Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling |
Type |
Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 20th ISSTT |
| Volume |
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Issue |
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Pages |
151-154 |
| Keywords |
HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts |
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Charlottesville, USA |
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no |
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Serial |
590 |
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| Author |
Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Superconducting single photon detector integrated with optical cavity |
Type |
Conference Article |
| Year |
2011 |
Publication |
Proc. MLPLIT |
Abbreviated Journal |
Proc. MLPLIT |
| Volume |
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Issue |
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Pages |
143-145 |
| Keywords |
NbN SSPD, cavity |
| Abstract |
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| Address |
Suzdal / Vladimir (Russia) |
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| Publisher |
Modern laser physics and laser-information technologies for science and manufacture |
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Conference |
1st international russian-chinese conference / youthschool-workshop |
| Notes |
September 23-28, 2011 |
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| Call Number |
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Serial |
1385 |
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| Author |
Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Noise equivalent power and dynamic range of NBN hot-electron bolometers |
Type |
Conference Article |
| Year |
2011 |
Publication |
Proc. MLPLIT |
Abbreviated Journal |
Proc. MLPLIT |
| Volume |
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Issue |
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Pages |
146-148 |
| Keywords |
NbN HEB |
| Abstract |
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| Address |
Suzdal / Vladimir (Russia) |
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| Publisher |
Modern laser physics and laser-information technologies for science and manufacture |
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Conference |
1st international russian-chinese conference / youthschool-workshop |
| Notes |
September 23-28, 2011 |
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no |
| Call Number |
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Serial |
1386 |
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| Author |
Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. |
| Title |
Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions |
Type |
Journal Article |
| Year |
2011 |
Publication |
Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
| Volume |
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Issue |
10 |
Pages |
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| Keywords |
terahertz electromagnetic radiation; superconductors; detectors of terahertz range |
| Abstract |
A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. |
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| Notes |
7 pages |
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no |
| Call Number |
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Serial |
1117 |
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| Author |
Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
IRMMW-THz |
Abbreviated Journal |
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Issue |
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Pages |
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| Keywords |
Ag2S quantum dots |
| Abstract |
A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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| ISSN |
2162-2035 |
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978-1-5386-8285-2 |
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no |
| Call Number |
8874267 |
Serial |
1286 |
| Permanent link to this record |
