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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Superconducting single photon detector integrated with optical cavity |
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Conference Article |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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143-145 |
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NbN SSPD, cavity |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1385 |
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Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Noise equivalent power and dynamic range of NBN hot-electron bolometers |
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Conference Article |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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146-148 |
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NbN HEB |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1386 |
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Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. |
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Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers |
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2006 |
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Proc. SPIE |
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Proc. SPIE |
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6373 |
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63730J (1 to 5) |
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NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations |
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We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers. |
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SPIE |
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Anwar, M.; DeMaria, A.J.; Shur, M.S. |
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Terahertz Physics, Devices, and Systems |
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1441 |
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Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
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Low-noise wide-band hot-electron bolometer mixer based on an NbN film |
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2009 |
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Radiophys. Quant. Electron. |
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52 |
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8 |
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576-582 |
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Keywords |
HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel |
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We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process. |
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599 |
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