| |
Records |
Links |
|
Author  |
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
|
| |
Title |
Response of graphene based gated nanodevices exposed to THz radiation |
Type |
Conference Article |
| |
Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
|
| |
Volume |
103 |
Issue |
|
Pages |
10003 (1 to 2) |
|
| |
Keywords |
graphene field-effect transistor, FET |
|
| |
Abstract |
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2100-014X |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1350 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
|
| |
Title |
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
Type |
Journal Article |
| |
Year |
2018 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
|
| |
Volume |
29 |
Issue |
24 |
Pages |
245204 (1 to 8) |
|
| |
Keywords |
single layer graphene, graphene nanoribbons |
|
| |
Abstract |
We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
|
| |
Address |
Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0957-4484 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
PMID:29553479 |
Approved |
no |
|
| |
Call Number |
|
Serial |
1308 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
|
| |
Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
Type |
Conference Article |
| |
Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
|
| |
Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
|
| |
Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
|
| |
Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2214-7853 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1316 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
|
| |
Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
| |
Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
| |
Volume |
1124 |
Issue |
|
Pages |
051054 |
|
| |
Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
|
| |
Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1300 |
|
| Permanent link to this record |
