| Records |
| Author |
Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
| Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
Type |
Journal Article |
| Year |
2020 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
Volume  |
10 |
Issue |
1 |
Pages |
16819 |
| Keywords |
VN HEB |
| Abstract |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
| Address |
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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2045-2322 |
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PMID:33033360; PMCID:PMC7546726 |
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no |
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1797 |
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| Author |
Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. |
| Title |
10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser |
Type |
Journal Article |
| Year |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
| Volume |
9 |
Issue |
7 |
Pages |
075307 |
| Keywords |
NbN HEB mixers, QCL, IR |
| Abstract |
We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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2158-3226 |
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1293 |
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Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. |
| Title |
Superconducting single-photon detectors made of ultra-thin VN films |
Type |
Conference Article |
| Year |
2018 |
Publication |
KnE Energy |
Abbreviated Journal |
KnE Energy |
| Volume |
3 |
Issue |
3 |
Pages |
83-89 |
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We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I |
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no |
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1230 |
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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
Superconducting hot electron bolometer mixer for middle IR range |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages |
686-687 |
| Keywords |
IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G. |
| Title |
Superconducting single-photon detector for near- and middle IR wavelength range |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages |
684-685 |
| Keywords |
NbN SSPD, SNSPD |
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Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems |
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Russian |
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1447 |
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