| Records |
Author  |
Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
| Title |
Thermal properties of NbN single-photon detectors |
Type |
Journal Article |
| Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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| Author |
Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
| Title |
Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates |
Type |
Miscellaneous |
| Year |
2021 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
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| Keywords |
metal films, NbN, InOx, Au/Ni, thermal relaxation |
| Abstract |
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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1163 |
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| Author |
Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
| Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
Type |
Journal Article |
| Year |
2021 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
15 |
Issue |
5 |
Pages |
054014 |
| Keywords |
InOx, Au/Ni, NbN films |
| Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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2331-7019 |
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1769 |
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Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
| Title |
Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
Type |
Journal Article |
| Year |
1991 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
80 |
Issue |
7 |
Pages |
503-506 |
| Keywords |
Nb detector, applications |
| Abstract |
We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
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0038-1098 |
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1677 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
| Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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Conference Article |
| Year |
2006 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
6275 |
Issue |
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Pages |
62750I (1 to 11) |
| Keywords |
HEB, mixer, membrane |
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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