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Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
Title Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
Year (up) 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 405-406
Keywords YBCO films
Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Corporate Author Thesis
Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1665
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Author Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E.
Title Heat transfer in YBaCuO thin film/sapphire substrate system Type Journal Article
Year (up) 1994 Publication J. Supercond. Abbreviated Journal J. Supercond.
Volume 7 Issue 2 Pages 341-344
Keywords YBCO films
Abstract The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Series Volume Series Issue Edition
ISSN 0896-1107 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1647
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Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
Year (up) 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 49 Issue 13 Pages 9091-9096
Keywords YBCO films
Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes PMID:10009690 Approved no
Call Number Serial 1648
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Author Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title Electron-phonon interaction in disordered NbN films Type Journal Article
Year (up) 1994 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 194-196 Issue Pages 1355-1356
Keywords NbN films
Abstract Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1649
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Author Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type Conference Article
Year (up) 1996 Publication Czech. J. Phys. Abbreviated Journal Czech. J. Phys.
Volume 46 Issue S2 Pages 857-858
Keywords NbC films
Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1617
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