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Author (up) Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. url  doi
openurl 
  Title Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers Type Conference Article
  Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW  
  Volume 2 Issue Pages 558-560  
  Keywords AlGaAs/GaAs HEB mixers  
  Abstract Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.  
  Address Kharkov, Ukraine  
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  Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)  
  Notes Approved no  
  Call Number Serial 1487  
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Author (up) Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G. openurl 
  Title NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz Type Conference Article
  Year 2002 Publication Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE Abbreviated Journal  
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  Publisher LETI Place of Publication St.-Petersburg Editor  
  Language Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 324  
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Author (up) Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. openurl 
  Title NbN HEB mixers for frequencies of 2.5 and 3.8 THz Type Conference Article
  Year 2004 Publication Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) Abbreviated Journal  
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  Publisher Place of Publication Moscow Editor  
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  Notes Approved no  
  Call Number RPLAB @ s @ qoheb_vnksf10_2004 Serial 349  
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Author (up) Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. url  openurl
  Title Noise equivalent power and dynamic range of NBN hot-electron bolometers Type Conference Article
  Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT  
  Volume Issue Pages 146-148  
  Keywords NbN HEB  
  Abstract  
  Address Suzdal / Vladimir (Russia)  
  Corporate Author Thesis  
  Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor  
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  Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop  
  Notes September 23-28, 2011 Approved no  
  Call Number Serial 1386  
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Author (up) Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 13 Issue 2 Pages 164-167  
  Keywords NbN HEB mixer  
  Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.  
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  Notes Approved no  
  Call Number Serial 341  
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