Records |
Author |
Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. |
Title |
Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer |
Type |
Journal Article |
Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
Volume |
195 |
Issue |
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Pages |
04004 (1 to 2) |
Keywords |
NbN HEB, QCL |
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2100-014X |
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3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) |
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Call Number |
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1808 |
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Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. |
Title |
Terahertz response of thin-film YBCO bolometers |
Type |
Journal Article |
Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
Volume |
57 |
Issue |
12 |
Pages |
1716-1719 |
Keywords |
YBCO HEB |
Abstract |
The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed. |
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1063-7842 |
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1817 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Title |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
Type |
Journal Article |
Year |
2010 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
44 |
Issue |
11 |
Pages |
1427-1429 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
Abstract |
The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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1216 |
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Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. |
Title |
Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion |
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Journal Article |
Year |
2019 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
Volume |
44 |
Issue |
5 |
Pages |
1198-1201 |
Keywords |
HEB applications |
Abstract |
We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. |
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0146-9592 |
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PMID:30821747 |
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Serial |
1801 |
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Author |
Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
Title |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
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Journal Article |
Year |
2005 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
39 |
Issue |
9 |
Pages |
1082-1086 |
Keywords |
2D electron gas, AlGaAs/GaAs heterostructures, mixers |
Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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no |
Call Number |
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Serial |
1463 |
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