| Records |
Author  |
Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
| Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012013 (1 to 6) |
| Keywords |
WSi SSPD, SNSPD |
| Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
| Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
| Volume |
48 |
Issue |
6 |
Pages |
671-675 |
| Keywords |
NbN HEB mixers |
| Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
| Year |
2004 |
Publication |
Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
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Pages |
329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
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Conference Article |
| Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages |
688-689 |
| Keywords |
NbN HEB mixers |
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Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area |
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Russian |
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1445 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz |
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Conference Article |
| Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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236-241 |
| Keywords |
HEB mixer, NbN, direct detection effect |
| Abstract |
We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB. |
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Northampton, Massachusetts, USA |
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344 |
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