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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  openurl
  Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 55-58  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
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  Notes Approved no  
  Call Number Serial 1602  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 163-166  
  Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN  
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  Notes Approved no  
  Call Number Serial 1603  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
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Author Smirnov, K.; Moshkova, M.; Antipov, A.; Morozov, P.; Vakhtomin, Y. url  doi
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  Title The cascade switching of the photon number resolving superconducting single-photon detectors Type Journal Article
  Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 31 Issue 2 Pages 1-4  
  Keywords PNR SSPD, SNSPD  
  Abstract In this article, present the first detailed study of cascade switching in superconducting photon number resolving detectors. The detectors were made in the form of four parallel nanowires, coupled with the single-mode optical fiber and mounted into a closed-cycle refrigerator with a temperature of 2.1 K. We found out the value of additional false pulses (N cas.sw. ) appearing due to cascade switching and showed that it is possible to set up the detector bias current that corresponds to a high level of the detection efficiency and a low level of N cas.sw. simultaneously. We reached the detection efficiency of 60% and N cas.sw. = 0.3%.  
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  ISSN 1051-8223 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1796  
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. url  doi
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  Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
  Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.  
  Volume 10 Issue 1 Pages 16819  
  Keywords VN HEB  
  Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.  
  Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia  
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  Series Volume Series Issue Edition  
  ISSN 2045-2322 ISBN Medium  
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  Notes PMID:33033360; PMCID:PMC7546726 Approved no  
  Call Number Serial 1797  
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