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Sobolewski, Roman; Xu, Ying; Zheng, Xuemei; Williams, Carlo; Zhang, Jin; Verevkin, Aleksandr; Chulkova, Galina; Korneev, Alexander; Lipatov, Andrey; Okunev, Oleg; Smirnov, Konstantin; Gol'tsman, Gregory N. |
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Spectral sensitivity of the NbN single-photon superconducting detector |
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2002 |
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IEICE Trans. Electron. |
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IEICE Trans. Electron. |
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E85-C |
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3 |
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797-802 |
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NbN SSPD, SNSPD |
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We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices. |
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1531 |
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Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman |
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Hot-electron effect in superconductors and its applications for radiation sensors |
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2002 |
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Superconductor Science and Technology |
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Supercond. Sci. Technol. |
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15 |
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4 |
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R1-R16 |
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HEB, SSPD |
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The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters. |
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0953-2048 |
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416 |
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Sáysz, Wojciech; Guziewicz, Marek; Bar, Jan; Wegrzecki, Maciej; Grabiec, Piotr; Grodecki, Remigiusz; Wegrzecka, Iwona; Zwiller, Val; Milosnaya, Irina; Voronov, Boris; Gol’tsman, Gregory; Kitaygorsky, Jen; Sobolewski, Roman |
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Superconducting NbN nanostructures for single photon quantum detectors |
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2008 |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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160 |
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SSPD, SNSPD |
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Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system. |
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1409 |
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Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman |
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Ultrafast NBN hot-electron single-photon detectors for electronic applications |
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2002 |
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Abstracts 8-th IUMRS-ICEM |
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Abstracts 8-th IUMRS-ICEM |
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NbN SSPD, SNSPD |
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We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor. |
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8th IUMRS International Conference on Electronic Materials |
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1532 |
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Korneev, A.; Kouminov, P.; Matvienko, V.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Currie, M.; Lo, W.; Wilsher, K.; Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, Roman |
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Title |
Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors |
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2004 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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84 |
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26 |
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5338-5340 |
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SSPD, NEP, QE |
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We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength. |
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0003-6951 |
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