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Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
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Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
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Conference Article |
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Year |
2005 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
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1 |
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5 |
Pages |
587-590 |
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Keywords |
NbN HEB mixers |
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Abstract |
In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. |
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Hangzhou, China |
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1931-7360 |
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Progress In Electromagnetics Research Symposium |
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1482 |
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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
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Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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9 |
Issue |
4 |
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242-245 |
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NbN HEB mixers |
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1069-1227 |
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1550 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
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Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
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Journal Article |
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2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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9 |
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3 |
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205-210 |
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NbN HEB mixers |
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1551 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
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2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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1997 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3548-3551 |
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NbN HEB mixers |
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A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1595 |
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Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M. |
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Title |
NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version |
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Conference Article |
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Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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258-271 |
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Keywords |
NbN HEB mixers |
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We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups. |
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1605 |
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