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Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. url  doi
openurl 
  Title Performance of THz components based on microstrip PECVD SiNx technology Type Journal Article
  Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.  
  Volume 7 Issue 6 Pages 765-771  
  Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices  
  Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition (up)  
  ISSN 2156-342X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1294  
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Author Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. url  doi
isbn  openurl
  Title Branchline and directional THz coupler based on PECVD SiNx-technology Type Conference Article
  Year 2016 Publication 41st IRMMW-THz Abbreviated Journal 41st IRMMW-THz  
  Volume Issue Pages  
  Keywords microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics  
  Abstract A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition (up)  
  ISSN 2162-2035 ISBN 978-1-4673-8485-8 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 7758586 Serial 1295  
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