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Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. |
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Title |
Slow electron–phonon cooling in superconducting diamond films |
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Journal Article |
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Year  |
2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
Pages |
1-4 |
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Keywords |
superconducting diamond films, electron-phonon cooling |
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Abstract |
We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers. |
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1051-8223 |
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1168 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
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Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
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Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1124 |
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051050 (1 to 5) |
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Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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1301 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1092 |
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012039 (1 to 4) |
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Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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1302 |
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Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Title |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
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Conference Article |
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Year |
2018 |
Publication |
Proc. Optical Sensing and Detection V |
Abbreviated Journal |
Proc. Optical Sensing and Detection V |
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Volume |
10680 |
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30-39 |
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Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Berghmans, F.; Mignani, A.G. |
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10.1117/12.2307020 |
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1306 |
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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
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Title |
Response of carbon nanotube film transistor to the THz radiation |
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Conference Article |
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Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
195 |
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05012 (1 to 2) |
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Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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