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Author | Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. | ||||
Title | Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation | Type | Journal Article | ||
Year | 2000 | Publication | IEEE Trans. Microw. Theory Techn. | Abbreviated Journal | IEEE Trans. Microw. Theory Techn. |
Volume | 48 | Issue | 4 | Pages | 683-689 |
Keywords | NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range | ||||
Abstract | In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season. | ||||
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ISSN | 0018-9480 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | RPLAB @ lobanovyury @ | Serial | 573 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. | ||||
Title | An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance | Type | Journal Article | ||
Year | 2005 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 15 | Issue | 2 | Pages | 472-475 |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. | ||||
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Notes | Approved | no | |||
Call Number | 1439677 | Serial | 1464 | ||
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Author | Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. | ||||
Title | A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator | Type | Conference Article | ||
Year | 2003 | Publication | IEEE MTT-S Int. Microwave Symp. Digest | Abbreviated Journal | IEEE MTT-S Int. Microwave Symp. Digest |
Volume | 2 | Issue | Pages | 751-754 | |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. | ||||
Address | Philadelphia, PA, USA | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1516 | |||
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Author | Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. | ||||
Title | Superconductive NbN hot-electron bolometric mixer performance at 250 GHz | Type | Conference Article | ||
Year | 1996 | Publication | Proc. 7th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 7th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 331-336 | ||
Keywords | NbN HEB mixers | ||||
Abstract | Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 945 | |||
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