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Author Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. url  doi
openurl 
  Title Probing the stability of HEB mixers with microwave injection Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue (up) 3 Pages 2300404 (1 to 4)  
  Keywords NbN HEB mixer, stability, Allan-variance  
  Abstract Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1355  
Permanent link to this record
 

 
Author Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. url  doi
openurl 
  Title A microwave-operated hot-electron-bolometric power detector for terahertz radiation Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue (up) 3 Pages 2300604 (1 to 4)  
  Keywords NbN HEB mixer  
  Abstract A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of  5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of  15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1558-2515 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1354  
Permanent link to this record
 

 
Author Shurakov, A.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title Microwave stabilization of a HEB mixer in a pulse-tube cryocooler Type Journal Article
  Year 2013 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 23 Issue (up) 3 Pages 1501504-1501504  
  Keywords NbN HEB mixers  
  Abstract We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1372  
Permanent link to this record
 

 
Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation Type Journal Article
  Year 2000 Publication IEEE Trans. Microw. Theory Techn. Abbreviated Journal IEEE Trans. Microw. Theory Techn.  
  Volume 48 Issue (up) 4 Pages 683-689  
  Keywords NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range  
  Abstract In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9480 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 573  
Permanent link to this record
 

 
Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. doi  openurl
  Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
  Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue (up) 4 Pages 6  
  Keywords Multi-pixel, HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1111  
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