| Records |
| Author |
Verevkin, A. A.; Zhang, J.; Slysz, W.; Sobolewski, R.; Lipatov, A. P.; Okunev, O.; Chulkova, G.; Korneev, A.; Gol’tsman, G. N. |
| Title |
Superconducting single-photon detectors for GHz-rate free-space quantum communications |
Type |
Conference Article |
Year  |
2002 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
4821 |
Issue |
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Pages |
447-454 |
| Keywords |
NbN SSPD, SNSPD, single-photon detector, thin-film superconductivity, quantum cryptography, ultrafast communications |
| Abstract |
We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography. |
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SPIE |
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Editor |
Ricklin, J.C.; Voelz, D.G. |
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Free-Space Laser Communication and Laser Imaging II |
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no |
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Serial |
1523 |
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| Author |
Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman |
| Title |
Ultrafast NBN hot-electron single-photon detectors for electronic applications |
Type |
Abstract |
| Year |
2002 |
Publication |
Abstracts 8-th IUMRS-ICEM |
Abbreviated Journal |
Abstracts 8-th IUMRS-ICEM |
| Volume |
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Issue |
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Pages |
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| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor. |
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Conference |
8th IUMRS International Conference on Electronic Materials |
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no |
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Serial |
1532 |
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| Author |
Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
| Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
Type |
Journal Article |
| Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
15 |
Issue |
12 |
Pages |
1689-1692 |
| Keywords |
NbN SSPD, SNSPD, QE, jitter, dark counts |
| Abstract |
We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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no |
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Serial |
1533 |
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| Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
| Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
Type |
Conference Article |
| Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
| Volume |
384-3 |
Issue |
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Pages |
107-116 |
| Keywords |
2DEG, AlGaAs/GaAs |
| Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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no |
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Serial |
1536 |
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| Author |
Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
| Title |
Ultrafast superconducting single-photon optical detectors and their applications |
Type |
Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
13 |
Issue |
2 |
Pages |
1151-1157 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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Edition |
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1051-8223 |
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509 |
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