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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
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2004 |
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Proc. 29th IRMMW / 12th THz |
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Proc. 29th IRMMW / 12th THz |
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329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Seleznev, V. A.; Tarkhov, M. A.; Voronov, B. M.; Milostnaya, I. I.; Lyakhno, V. Yu; Garbuz, A. S.; Mikhailov, M. Yu; Zhigalina, O. M.; Gol'tsman, G. N. |
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Deposition and characterization of few-nanometers-thick superconducting Mo-Re films |
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Journal Article |
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2008 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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21 |
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11 |
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115006 (1 to 6) |
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We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%. |
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RPLAB @ gujma @ |
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723 |
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Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg |
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Coherent dynamics and decoherence in a superconducting weak link |
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Journal Article |
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2016 |
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Physic. Rev. B, |
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Physic. Rev. B, |
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94 |
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180508 |
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RPLAB @ akorneev @ |
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1123 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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1999 |
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Semicond. |
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Semicond. |
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33 |
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5 |
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551-554 |
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2DEG, AlGaAs/GaAs heterostructures |
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The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. |
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Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation |
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Conference Article |
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2016 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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741 |
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012143 (1 to 6) |
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carbon nanotubes, CNT |
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Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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1742-6588 |
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1336 |
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