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Sáysz, Wojciech; Guziewicz, Marek; Bar, Jan; Wegrzecki, Maciej; Grabiec, Piotr; Grodecki, Remigiusz; Wegrzecka, Iwona; Zwiller, Val; Milosnaya, Irina; Voronov, Boris; Gol’tsman, Gregory; Kitaygorsky, Jen; Sobolewski, Roman |
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Superconducting NbN nanostructures for single photon quantum detectors |
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2008 |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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160 |
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SSPD, SNSPD |
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Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system. |
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Korneev, Alexander; Korneeva, Yulia; Florya, Irina; Elezov, Michael; Manova, Nadezhda; Tarkhov, Michael; An, Pavel; Kardakova, Anna; Isupova, Anastasiya; Chulkova, Galina; Voronov, Boris |
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Recent advances in superconducting NbN single-photon detector development |
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2011 |
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Proc. SPIE |
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Proc. SPIE |
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8072 |
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807202 (1 to 10) |
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SSPD |
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Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs. |
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663 |
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Maslennikova, Anna; Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Kaurova, Natalia; Voronov, Boris; Gol’tsman, Gregory |
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Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling |
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2010 |
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Proc. 21th Int. Symp. Space Terahertz Technol. |
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Proc. 21th Int. Symp. Space Terahertz Technol. |
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218-219 |
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The space observatory Millimetron will be operating in the millimeter, sub-millimeter and infrared ranges using a 12-m cryogenic telescope in a single-dish mode, and as an interferometer with the space-earth and space-space baselines (the latter after the launch of the second identical space telescope). The observatory will allow performing astronomical observations with an unprecedented sensitivity (down to nJy level) in the single-dish mode, and observations with a high angular resolution in the interferometer mode. The total spectral range 20 μm – 2 cm is separated into 10 bands. HEB mixers with two cooling channels (diffusion and phonon) have been chosen to be the detectors of choice of the system covering the range from 1 THz to 6 THz as the best detectors in terahertz receivers. This type of HEB has already shown good work in the terahertz range. A gain bandwidth of 6 GHz at an LO frequency of 300 GHz and a noise temperature of 750 K at an LO frequency of 2.5 THz are the best values for HEB mixers with two cooling channels [1]. Theoretical estimations predict a bandwidth up to 12 GHz. Reaching such good result demands more systematic and thorough research. We present the results of the gain bandwidth and noise temperature measurements for superconducting hot- electron bolometer mixers with two cooling channels. These characteristics of the devices of lengths varying from 50 to 200 nm were measured for the purposes of Millimetron at frequencies of 600 GHz, 2.5 THz, and 3.8 THz. For gain bandwidth measurements we use two BWO’s operating at 600 GHz: one as the signal and the second as the LO. The noise temperature measurements were performed using a gas discharge laser as the LO and blackbodies at 77 K and 295 K as input signals. The devices studied consist of 3.5-nm-thick NbN bridges connected to thick (10 nm) high conductivity Au leads fabricated in situ. This method of fabricating devices has already proved promising by opening the diffusion cooling channel. [2] Fig. 1 shows a SEM photograph of a log-spiral antenna with an HEB at its apex. Fig. 1. Left: a SEM photograph of a log-spiral antenna with an HEB at its apex; right: a close-up of the HEB at the antenna apex. [1] S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, and G. N. Gol’tsman, NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling, Proc. of the 20 th Int. Symp. Space. Technol., Charlottesville, Virginia, USA, April 20 – 22, 2009. 218[2] S. A. Ryabchun * , I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov and G. N. Goltsman, Fabrication and characterisation of NbN HEB mixers with in situ gold contacts, Proc. of the 19 th Int. Symp. Space. Technol., Groningen, The Netherlands, April 28-30, 2008 |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
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Gain bandwidth and noise temperature of NbTiN HEB mixer |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
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NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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Rosfjord, Kristine M.; Yang, Joel K. W.; Dauler, Eric A.; Kerman, Andrew J.; Vikas Anant; Voronov, Boris M.; Gol'tsman, Gregory N.; Berggren, Karl K. |
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Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating |
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2006 |
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Opt. Express |
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Opt. Express |
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14 |
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2 |
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527-534 |
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SSPD, SNSPD, cavity |
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We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported. |
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PMID:19503367 |
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