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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z.
Title Hot electron bolometric mixers based on NbN films deposited on MgO substrates Type Conference Article
Year 1999 Publication Inst. Phys. Conf. Ser. Abbreviated Journal Inst. Phys. Conf. Ser.
Volume 167 Issue Pages 687-690
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Corporate Author Thesis
Publisher Place of Publication Barcelona, Spain Editor
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Area Expedition Conference 4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser.
Notes Approved no
Call Number Serial 297
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Author Uzawa, Y.; Miki, S.; Wang, Z.; Kawakami, A.; Kroug, M.; Yagoubov, P.; Kollberg, E.
Title Performance of a quasi-optical NbN hot-electron bolometric mixer at terahertz frequencies Type Journal Article
Year 2002 Publication Superconductor Science and Technology Abbreviated Journal Supercond. Sci. Technol.
Volume 15 Issue 1 Pages 141-145
Keywords HEB, mixer
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ISSN 0953-2048 ISBN (up) Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ s @ Serial 548
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Author Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y.
Title Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver Type Conference Article
Year 2008 Publication Proc. 19th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 263-266
Keywords SIS mixer, reflection, emissivity, mirror, space telescope, space observatory
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Area Expedition Conference
Notes Approved no
Call Number Serial 580
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Author Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M.
Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
Year 2009 Publication SPICA Abbreviated Journal SPICA
Volume Issue SPICA Workshop 2009 Pages
Keywords detectors; Infrared
Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 672
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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ISSN 1051-8223 ISBN (up) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
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