|   | 
Details
   web
Records
Author Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Sobolev, A. S.; Torgashin, M. Y.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Wild, W.
Title Superconducting integrated submillimeter receiver for TELIS Type Journal Article
Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 17 Issue 2 Pages 336-342
Keywords SIR
Abstract (up)
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 524
Permanent link to this record
 

 
Author Koshelets, V. P.; Borisov, V. B.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Lapitskaya, I. L.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.
Title Integrated submillimeter receiver for TELIS Type Journal Article
Year 2006 Publication Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe” Abbreviated Journal
Volume Issue Pages
Keywords SIR
Abstract (up)
Address
Corporate Author Thesis
Publisher Place of Publication Bjorkliden, Kiruna, Sweden Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Presentation Approved no
Call Number Serial 527
Permanent link to this record
 

 
Author Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title Improved characteristics of NbN HEB mixers integrated with log-periodic antennas Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 200-207
Keywords NbN HEB mixers
Abstract (up)
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1574
Permanent link to this record
 

 
Author Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M.
Title Optical coupling and conversion gain for NbN HEB mixer at THz frequencies Type Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 47-50
Keywords NbN HEB mixers
Abstract (up)
Address Charlottesville, Virginia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1601
Permanent link to this record
 

 
Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract (up) A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
Permanent link to this record