|   | 
Details
   web
Records
Author (up) Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Vreeling, W. J.; Wild, W.; Pylypenko, O. M.
Title Superconducting submm integrated receiver for TELIS Type Conference Article
Year 2006 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 43 Issue Pages 1377-1380
Keywords SIR
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 514
Permanent link to this record
 

 
Author (up) Koshelets, V. P.; Shitov, S. V.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Pylypenko, O. M.
Title Superconducting integrated receiver for TELIS Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 15 Issue 2 Pages 960-963
Keywords SIR
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 517
Permanent link to this record
 

 
Author (up) Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Conference Article
Year 1998 Publication Proc. 28th European Microwave Conf. Abbreviated Journal Proc. 28th European Microwave Conf.
Volume 1 Issue Pages 294-299
Keywords NbN HEB mixers
Abstract In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 28th European Microwave Conference
Notes Approved no
Call Number Serial 1580
Permanent link to this record
 

 
Author (up) Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
Permanent link to this record
 

 
Author (up) Torgashin, M. Yu.; Koshelets, V. P.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Yagoubov, P. A.
Title Superconducting integrated receivers based on Nb-AlN-NbN circuits Type Journal Article
Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 17 Issue 2 Pages 379-382
Keywords
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ s @ mix_SIR_ieee_trans_2007 Serial 406
Permanent link to this record