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Author Koshelets, V. P.; Shitov, S. V.; Dmitriev, P. N., Ermakov, A. B.; Filippenko, L. V.; Koryukin, O.V.; Sobolev, A.S.; Torgashin, M.Yu.; Yagoubov, P.; Hoogeveen, R. openurl 
  Title (up) Integrated submillimeter and terahertz receivers with superconducting local oscillator Type Abstract
  Year 2004 Publication Presanted at 8th International Workshop “From Andreev Reflection to the International Space Station” Abbreviated Journal  
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  Notes Approved no  
  Call Number Serial 513  
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Author Koshelets, V. P.; Borisov, V. B.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Lapitskaya, I. L.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M. openurl 
  Title (up) Integrated submillimeter receiver for TELIS Type Journal Article
  Year 2006 Publication Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe” Abbreviated Journal  
  Volume Issue Pages  
  Keywords SIR  
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  Publisher Place of Publication Bjorkliden, Kiruna, Sweden Editor  
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  Notes Presentation Approved no  
  Call Number Serial 527  
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Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. doi  openurl
  Title (up) Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
  Year 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal  
  Volume 2 Issue Pages 972-977  
  Keywords HEB mixer, fabrication process  
  Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.  
  Address Jerusalem, Israel  
  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference 27th Eur. Microwave Conf.  
  Notes Approved no  
  Call Number Serial 1075  
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Author Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. url  openurl
  Title (up) Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates Type Conference Article
  Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 245-257  
  Keywords NbN HEB mixers, fabrication process  
  Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 276  
Permanent link to this record
 
 
Author Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. url  doi
openurl 
  Title (up) Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN Type Conference Article
  Year 1999 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 3795 Issue Pages 357-368  
  Keywords NbN HEB mixers  
  Abstract We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Hwu, R.J.; Wu, K.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz and Gigahertz Photonics  
  Notes Approved no  
  Call Number Serial 1561  
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