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Koshelets, V. P.; Borisov, V. B.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Lapitskaya, I. L.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M. |
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Integrated submillimeter receiver for TELIS |
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2006 |
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Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe” |
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Bjorkliden, Kiruna, Sweden |
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527 |
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Uzawa, Y.; Miki, S.; Wang, Z.; Kawakami, A.; Kroug, M.; Yagoubov, P.; Kollberg, E. |
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Performance of a quasi-optical NbN hot-electron bolometric mixer at terahertz frequencies |
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Journal Article |
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2002 |
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Superconductor Science and Technology |
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Supercond. Sci. Technol. |
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15 |
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1 |
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141-145 |
| Keywords |
HEB, mixer |
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0953-2048 |
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RPLAB @ s @ |
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548 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
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Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Journal Article |
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1998 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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73 |
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19 |
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2814-2816 |
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NbN HEB mixers, noise temperature, local oscillator power |
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In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4217-4220 |
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NbN HEB mixers |
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NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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1568 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3757-3760 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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