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Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. |
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Title |
Hot electron mixers, the potential competition |
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1992 |
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Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
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Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
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201-206 |
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HEB mixers |
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There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper. |
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ESA Symposium on Photon Detectors for Space Instrumentation |
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1667 |
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Ekstrom, H.; Karasik, B.; Weikle, R.; Yngvesson, K. S.; Gol’tsman, G.; Kollberg, E.; Gershenzon, E. |
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Title |
Mixers using superconducting Nb films in the resistive state |
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1993 |
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23rd European Microwave Conf. |
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23rd European Microwave Conf. |
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787-789 |
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Nb HEB mixers |
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The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies. |
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1651 |
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Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S. |
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Investigation of a superconducting hot electron mixer |
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1994 |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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169-188 |
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HEB mixers |
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Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies. |
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1642 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
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Title |
Hot electron quasioptical NbN superconducting mixer |
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1995 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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2232-2235 |
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Keywords |
NbN HEB mixers |
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Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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1995 |
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JETP Lett. |
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JETP Lett. |
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61 |
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7 |
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591-595 |
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2DEG, AlGaAs/GaAs heterostructures |
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The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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