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Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. |
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Title |
Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range |
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Miscellaneous |
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Year |
2015 |
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3th ICQT |
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3th ICQT |
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SSPD, SNSPD |
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Hotel Ukraina (Radisson), Moscow |
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1253 |
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Author |
Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
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Title |
A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
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Journal Article |
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Year |
2021 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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31 |
Issue |
5 |
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1-4 |
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Keywords |
NbN SSPD, SNSPD, WSi |
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Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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1051-8223 |
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1223 |
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Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. |
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Title |
NbN single-photon detectors with saturated dependence of quantum efficiency |
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Journal Article |
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2018 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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31 |
Issue |
3 |
Pages |
035011 (1 to 8) |
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Keywords |
NbN SSPD, SNSPD |
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The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm. |
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0953-2048 |
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1232 |
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Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. |
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Title |
Electron diffusivity measurements of VN superconducting single-photon detectors |
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Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051032 |
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Keywords |
SSPD, SNSPD, VN |
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The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm. |
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1742-6588 |
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1229 |
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Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
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Title |
High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
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Journal Article |
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Year |
2019 |
Publication |
J. Opt. Soc. Am. B |
Abbreviated Journal |
J. Opt. Soc. Am. B |
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36 |
Issue |
3 |
Pages |
B20 |
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Keywords |
NbN PNR SSPD, SNSPD |
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The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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