| Records |
| Author |
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
Type |
Journal Article |
| Year |
1995 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
77 |
Issue |
8 |
Pages |
4064-4070 |
| Keywords |
YBCO HTS switches |
| Abstract |
A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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0021-8979 |
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1623 |
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| Author |
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films |
Type |
Conference Article |
| Year |
1994 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
2160 |
Issue |
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Pages |
74-82 |
| Keywords |
YBCO HTS switches |
| Abstract |
We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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SPIE |
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Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W. |
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Superconductive Devices and Circuits |
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1638 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. |
| Title |
Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light |
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Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
5 |
Pages |
955-960 |
| Keywords |
NbN HEB detectors |
| Abstract |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. |
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Russian |
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0131-5366 |
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1670 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
| Title |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
12 |
Pages |
2386-2402 |
| Keywords |
YBCO HTS switches |
| Abstract |
A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed. |
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0131-5366 |
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1674 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A. |
| Title |
Ultrafast superconductive switch |
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Journal Article |
| Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
| Volume |
27 |
Issue |
2 |
Pages |
2844-2846 |
| Keywords |
Nb superconducting switch |
| Abstract |
The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample. |
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1941-0069 |
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1680 |
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