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Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films Type Conference Article
Year 1994 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 2160 Issue Pages 74-82
Keywords YBCO HTS switches
Abstract (down) We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Superconductive Devices and Circuits
Notes Approved no
Call Number Serial 1638
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Author Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title High speed current switching of homogeneous YBaCuO film between superconducting and resistive states Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 3042-3045
Keywords YBCO HTS HEB switches
Abstract (down) Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1620
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Author Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M.
Title Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation Type Journal Article
Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 64 Issue 22 Pages 3036-3038
Keywords YBCO HTS HEB, nonequilibrium
Abstract (down) Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1639
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Author Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A.
Title Ultrafast superconductive switch Type Journal Article
Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.
Volume 27 Issue 2 Pages 2844-2846
Keywords Nb superconducting switch
Abstract (down) The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1941-0069 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1680
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Author Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title Fast NbN superconducting switch controlled by optical radiation Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3734-3737
Keywords NbN superconducting switch
Abstract (down) The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1596
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