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Author Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A. url  doi
openurl 
  Title Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages (down) 012195 (1 to 4)  
  Keywords SSPD modelling, SNSPD  
  Abstract The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.  
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  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1785  
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Author Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. url  doi
openurl 
  Title Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages (down) 012146 (1 to 3)  
  Keywords NbN SSPD, SNSPD, MoSi  
  Abstract In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1787  
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Author Moshkova, M.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K. url  doi
openurl 
  Title Large active area superconducting single photon detector Type Conference Article
  Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1410 Issue Pages (down) 012139  
  Keywords SSPD, SNSPD  
  Abstract We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1224  
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Author Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. url  doi
openurl 
  Title Developing of NbN films for superconducting microstrip single-photon detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages (down) 012116 (1 to 5)  
  Keywords NbN SSPD, SNSPD, NbN films  
  Abstract We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1786  
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Author Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. url  doi
openurl 
  Title Superconducting detector of IR single-photons based on thin WSi films Type Conference Article
  Year 2016 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 737 Issue Pages (down) 012032  
  Keywords WSi SSPD, SNSPD, NEP  
  Abstract We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1235  
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Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. url  doi
openurl 
  Title Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume 781 Issue Pages (down) 012013 (1 to 6)  
  Keywords WSi SSPD, SNSPD  
  Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1798  
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Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. url  doi
openurl 
  Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume 781 Issue Pages (down) 012011 (1 to 5)  
  Keywords WSi, NbN SSPD, SNSPD  
  Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.  
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  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1799  
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 56 Issue 16 Pages (down) 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
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  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1766  
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. url  doi
openurl 
  Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
  Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume 15 Issue 12 Pages (down) 7859-7866  
  Keywords carbon nanotubes, CNT, tunable superconductivity, van Hove singularities  
  Abstract Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.  
  Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States  
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  Series Volume Series Issue Edition  
  ISSN 1530-6984 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no  
  Call Number Serial 1782  
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. url  doi
openurl 
  Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
  Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume 20 Issue 10 Pages (down) 7296-7303  
  Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation  
  Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.  
  Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland  
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  ISSN 1530-6984 ISBN Medium  
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  Notes PMID:32903004 Approved no  
  Call Number Serial 1781  
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