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Author |
Гершензон, Е. М. |
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Title |
Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии |
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Conference Article |
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Year |
1982 |
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Тезисы докладов 22 Всесоюзной конференции по физике низких температур |
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79-80 |
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russian |
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231 |
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Author |
Karasik, B. S.; Elantiev, A. I. |
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Title |
Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
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Conference Article |
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Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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229-246 |
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HEB mixers |
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A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Pasadena, Ca |
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258 |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Title |
Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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Journal Article |
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Year |
2001 |
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Appl. Phys. Lett. |
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79 |
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2049-2051 |
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Keywords |
HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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Корнеев, Александр Александрович |
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Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора |
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2006 |
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М. МПГУ |
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Ph.D. thesis |
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Russian |
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480 |
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Масленников, Сергей Николаевич |
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Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
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2007 |
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М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
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Ph.D. thesis |
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Russian |
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481 |
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Author |
Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
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Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
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Conference Article |
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2007 |
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Proc. International conference on microwave and millimeter wave technology |
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Proc. ICMMT |
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1-3 |
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HEB, mixer, gain bandwidth |
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In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Builin |
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RPLAB @ lobanovyury @ |
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575 |
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Author |
Финкель, М. И. |
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Title |
Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN |
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2006 |
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М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion bandwidth, conversion loss |
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Ph.D. thesis |
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597 |
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Рябчун, С. А. |
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Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN |
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2009 |
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М. МПГУ |
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98 |
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HEB, mixer, terahertz, THz, stability, Allan variance, conversion bandwidth, in-situ technique, Au contacts |
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Ph.D. thesis |
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598 |
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Морозов, Дмитрий Владимирович |
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Приемные устройства терагерцового диапазона на эффекте разогрева двумерного электронного газа в гетероструктурах AlGaAs/GaAs |
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2007 |
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М. МПГУ |
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RPLAB @ s @ |
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626 |
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Feautrier, P.; le Coarer, E.; Espiau de Lamaestre, R.; Cavalier, P.; Maingault, L.; Villégier, J-C.; Frey, L.; Claudon, J.; Bergeard, N.; Tarkhov, M.; Poizat, J-P. |
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High-speed superconducting single photon detectors for innovative astronomical applications |
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Conference Article |
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2008 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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97 |
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1 |
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10 |
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SSPD |
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Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper. |
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RPLAB @ gujma @ |
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