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Author |
Гершензон, Е. М. |
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Title |
Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии |
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Conference Article |
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Year |
1982 |
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Тезисы докладов 22 Всесоюзной конференции по физике низких температур |
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79-80 |
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russian |
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231 |
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Author |
Karasik, B. S.; Elantiev, A. I. |
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Title |
Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
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Conference Article |
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Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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229-246 |
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Keywords |
HEB mixers |
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A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Pasadena, Ca |
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258 |
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Author |
Karasik, B. S.; Elantiev, A. I. |
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Title |
Noise temperature limit of a superconducting hot-electron bolometer mixer |
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Journal Article |
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Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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68 |
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6 |
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853-855 |
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Keywords |
HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth |
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0003-6951 |
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260 |
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Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
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Journal Article |
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Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
68 |
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16 |
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2285-2287 |
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Keywords |
HEB mixer, diffusion cooling channel, diffusion channel |
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0003-6951 |
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262 |
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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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Journal Article |
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2000 |
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Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
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61 |
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9 |
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6041-6047 |
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Keywords |
disordered conductors, scattering potential, electron-phonon interaction |
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Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Author |
Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Title |
Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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Journal Article |
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2001 |
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Appl. Phys. Lett. |
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79 |
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2049-2051 |
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HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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Author |
Корнеев, Александр Александрович |
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Title |
Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора |
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2006 |
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М. МПГУ |
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Ph.D. thesis |
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Russian |
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480 |
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Author |
Масленников, Сергей Николаевич |
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Title |
Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
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2007 |
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М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
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Ph.D. thesis |
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Russian |
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481 |
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Author |
Tong, C.-Y.E.; Meledin, D.V.; Marrone, D.P.; Paine, S.N.; Gibson, H.; Blundell, R. |
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Near field vector beam measurements at 1 THz |
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2003 |
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IEEE Microw. Compon. Lett. |
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13 |
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6 |
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235-237 |
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HEB, mixer, waveguide, LO power, local oscillator power, saturation effect, dynamic range |
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We have performed near-field vector beam measurements at 1.03 THz to characterize and align the receiver optics of a superconducting receiver. The signal source is a harmonic generator mounted on an X-Y translation stage. We model the measured two-dimensional complex beam pattern by a fundamental Gaussian mode, from which we derive the position of the beam center, the beam radius and the direction of propagation. By performing scans in the planes separated by 400 mm, we have confirmed that our beam pattern measurements are highly reliable. |
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1531-1309 |
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RPLAB @ lobanovyury @ |
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574 |
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Author |
Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
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Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
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Conference Article |
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2007 |
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Proc. International conference on microwave and millimeter wave technology |
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Proc. ICMMT |
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1-3 |
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HEB, mixer, gain bandwidth |
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In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Builin |
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RPLAB @ lobanovyury @ |
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