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Author Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. url  doi
openurl 
  Title Single photon detection system for visible and infrared spectrum range Type (up) Journal Article
  Year 2018 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 43 Issue 24 Pages 6085-6088  
  Keywords  
  Abstract We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes https://arxiv.org/abs/1807.04273 Approved no  
  Call Number Serial 1227  
Permanent link to this record
 
 
Author Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. url  doi
openurl 
  Title NbN single-photon detectors with saturated dependence of quantum efficiency Type (up) Journal Article
  Year 2018 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 31 Issue 3 Pages 035011 (1 to 8)  
  Keywords NbN SSPD, SNSPD  
  Abstract The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1232  
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Author Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. url  doi
openurl 
  Title Rise time of voltage pulses in NbN superconducting single photon detectors Type (up) Journal Article
  Year 2016 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 109 Issue 5 Pages 052601  
  Keywords SSPD, SNSPD  
  Abstract We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K).		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1236  
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Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. url  doi
openurl 
  Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type (up) Journal Article
  Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 7 Pages 075307  
  Keywords NbN HEB mixers, QCL, IR  
  Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1293  
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Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. url  doi
openurl 
  Title Performance of THz components based on microstrip PECVD SiNx technology Type (up) Journal Article
  Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.  
  Volume 7 Issue 6 Pages 765-771  
  Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices  
  Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2156-342X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1294  
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Author Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. url  openurl
  Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type (up) Journal Article
  Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 10 Pages 1950-1954  
  Keywords NbN films  
  Abstract Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1675  
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type (up) Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 24 Issue 3 Pages 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
  Abstract  
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  Notes Approved no  
  Call Number Serial 1730  
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type (up) Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 73 Issue 1 Pages 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1752  
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Author Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. url  openurl
  Title Механизм преобразования частоты в n-InSb-смесителе Type (up) Journal Article
  Year 1991 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 25 Issue 11 Pages 1986-1998  
  Keywords n-InSb mixer  
  Abstract Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн.  
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  Language Russian Summary Language Original Title  
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  Notes Approved no  
  Call Number Serial 1753  
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Author Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. url  openurl
  Title Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла Type (up) Journal Article
  Year 1990 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 24 Issue 12 Pages 2145-2150  
  Keywords Hall constant, concentration of impurities, p-Si  
  Abstract На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая.  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1754  
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